1 March 1991 Characterization and switching study of an optically controlled GaAs switch
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Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25065
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
Abstract
The excitation of persistent photoconductivity followed by photoquenching has been demonstrated in copper-compensated silicon-doped semi-insulating GaAs (GaAs:Si:Cu). These processes allow a switch to be developed which can be closed by the application of one laser pulse ()1064 nm) and opened by the application of a second laser pulse (A21OO nm). In order to further understand the operation of such a switch the dark current-voltage (I-V) characteristics of a switch based on the GaAs:Si:Cu material are investigated using both dc and pulsed electric fields. Experimental studies are also performed on the closing phase of the switch using a 0-switched Nd:YAG laser. In these studies the transition from persistent photoconductivity to non-ohmic current transport is illustrated.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David C. Stoudt, David C. Stoudt, Michael S. Mazzola, Michael S. Mazzola, Scott F. Griffiths, Scott F. Griffiths, } "Characterization and switching study of an optically controlled GaAs switch", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25065; https://doi.org/10.1117/12.25065
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