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1 March 1991 GaAs opto-thyristor for pulsed power applications
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Proceedings Volume 1378, Optically Activated Switching; (1991)
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
An optically gated thyristor based on GaAs has been designed fabricated and investigated for pulsed power applications. The device included a 200-pm semi-insulating base layer and was triggered with an 848-nm 1-pJ 100-nsec laser diode. The DC blocking voltage of the thyristor was observed to be V the peak current 300 A and the current rate of rise A/sec. Lock-on effect was also observed and is discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung H. Hur, Peyman Hadizad, Hanmin Zhao, Steven G. Hummel, Paul Daniel Dapkus, Harold R. Fetterman, and Martin A. Gundersen "GaAs opto-thyristor for pulsed power applications", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991);

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