Graded AlxGa1-xAs photoconductive devices for high-efficiency picosecond optoelectronic switching

Jeffrey D. Morse; Raymond P. Mariella Jr.; Robert W. Dutton

doi:10.1117/12.25041

1 March 1991 Graded Al_xGa_1-xAs photoconductive devices for high-efficiency picosecond optoelectronic switching

Jeffrey D. Morse, Raymond P. Mariella Jr., Robert W. Dutton

Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25041
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States

Abstract

Picoseccond photoconductivity has been achieved for a variety of semiconductor materials by techniques which have now become almost standard1. Enhanced scattering by the excessive amount of deep level defects which provide for picosecond recombination lifetimes significantly reduces the mobility, degrading the responsivity of the photoconductor. This paper will present a concept where improved responsivity is achievable by utilizing a graded bandgap AlxGaixAs active detecting layer grown on a high defect density GaAs layer by molecular beam epitaxy (MBE).

Citation Download Citation

Jeffrey D. Morse, Raymond P. Mariella Jr., and Robert W. Dutton "Graded Al_xGa_1-xAs photoconductive devices for high-efficiency picosecond optoelectronic switching", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25041

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