Paper
1 March 1991 High-power/high-pulse repetition frequency (PRF) pulse generation using a laser-diode-activated photoconductive GaAs switch
A. H. Kim, Robert J. Zeto, Robert J. Youmans, Christine A. Kondek, Maurice Weiner, Bogoliub Lalevic
Author Affiliations +
Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25051
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
Abstract
The generation of subnanosecond risetime pulses with 2 MW peak power at 1 kHz PRF has been achieved by triggering a hybrid pulser with a laser diode array. The hybrid pulser combines an optical switch centered in a metallized teflon disk that serves as an energy storage medium as well as a radial transmission line. Nearly 90 ofthebias voltage (10 kV) was delivered to a 50 ohm load impedance as a result of the variation of impedance of the radial line. Avalanche switching yielded 4 nano seconds pulses with a risetime of less than 500 picoseconds. _
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. H. Kim, Robert J. Zeto, Robert J. Youmans, Christine A. Kondek, Maurice Weiner, and Bogoliub Lalevic "High-power/high-pulse repetition frequency (PRF) pulse generation using a laser-diode-activated photoconductive GaAs switch", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25051
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KEYWORDS
Switches

Electrodes

Gallium arsenide

Switching

Semiconductor lasers

Dielectrics

Pulsed laser operation

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