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1 March 1991 High-power waveform generation using photoconductive switches
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Proceedings Volume 1378, Optically Activated Switching; (1991)
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
In the nanosecond time regime gallium arsenide photoconductive devices are nearly ideal circuit elements for the generation of wideband high-power waveforms. The ability to activate these devices in an avalanche mode further enhances their utility since semiconductor lasers with nanojoule-range pulsed output can enable turn-on. Furthermore characteristics of gaffium arsenide provide the ability to fabricate switches with significant DC hold off capability. In general microwave matching requirements tend to be in opposition to high-voltage integrity constraints. This creates formidable design challenges. Careful compromises in the packaging design have led to megawatt-level peak power outputs at multi-gigahertz frequencies from surprisingly small devices. Work to date has concentrated on monocycle generation for use with a wideband antenna structure. Resultant radiated outputs have applications in ultrawideband radar electronic warfare and communications.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey A. Oicles, Heikki I. Helava, Jon R. Grant, Larry O. Ragle, and Susan C. Wessman "High-power waveform generation using photoconductive switches", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991);


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