Paper
1 March 1991 Observation of power gain in an inductive pulsed power system with an optically activated semiconductor closing and opening switch
Chun C. Kung, Eric E. Funk, Eve A. Chauchard, M. J. Rhee, Chi Hsiang Lee, Li Yan
Author Affiliations +
Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25060
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
Abstract
Peak power gain greater than 15 was obtained with a current charged transmission line and an optically activated semiconductor opening switch. The optical pulse used for activating the switch is generated by a Nd:glass laser emitting at 1. 054 pm. It has a slow rise-time (''--''2OO uS) and a fast fall-time (s1O uS). In the experiment a 2 kV output voltage pulse was achieved with a 5 mm cube GaAs p-i-n diode sitch at 500 V charging voltage.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chun C. Kung, Eric E. Funk, Eve A. Chauchard, M. J. Rhee, Chi Hsiang Lee, and Li Yan "Observation of power gain in an inductive pulsed power system with an optically activated semiconductor closing and opening switch", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25060
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KEYWORDS
Switches

Resistance

Pulsed laser operation

Pulsed power

Diodes

Gallium arsenide

Semiconductors

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