Optical probing of field dependent effects in GaAs photoconductive switches

William R. Donaldson; Lawrence E. Kingsley

doi:10.1117/12.25057

1 March 1991 Optical probing of field dependent effects in GaAs photoconductive switches

William R. Donaldson, Lawrence E. Kingsley

Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25057
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States

Abstract

A new diagnostic technique for measuring electric fields on the surfaces of semiconductors is described. The diagnostic uses the Pockels effect which mixes the electric field on a semiconductor surface with that of an incident optical pulse in a nonlinear crystal rotating the polarization of the optical pulse. This rotation can be detected and used to extract the surface electric field. Electro-optic sampling as this technique is called allows us to study the physics of semiconductors subjected to high fields with 100-ps time resolution. We have seen field enhancements in GaAs in photoconductive switches which modeling has shown to be due to Gunn domains.

Citation Download Citation

William R. Donaldson and Lawrence E. Kingsley "Optical probing of field dependent effects in GaAs photoconductive switches", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25057

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