Paper
1 March 1991 Optical probing of field dependent effects in GaAs photoconductive switches
William R. Donaldson, Lawrence E. Kingsley
Author Affiliations +
Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25057
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
Abstract
A new diagnostic technique for measuring electric fields on the surfaces of semiconductors is described. The diagnostic uses the Pockels effect which mixes the electric field on a semiconductor surface with that of an incident optical pulse in a nonlinear crystal rotating the polarization of the optical pulse. This rotation can be detected and used to extract the surface electric field. Electro-optic sampling as this technique is called allows us to study the physics of semiconductors subjected to high fields with 100-ps time resolution. We have seen field enhancements in GaAs in photoconductive switches which modeling has shown to be due to Gunn domains.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William R. Donaldson and Lawrence E. Kingsley "Optical probing of field dependent effects in GaAs photoconductive switches", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25057
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Cited by 9 scholarly publications.
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KEYWORDS
Switches

Gallium arsenide

Switching

Electro optics

Electrodes

Crystals

Electro optical modeling

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