1 March 1991 Optically triggered GaAs thyristor switches: integrated structures for environmental hardening
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Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25043
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
Abstract
Opticallytriggered thyristor switches often operate in adverse environments such as high temperature and high dose-rate transient radiation which can result in lowered operating voltage and premature triggering. These effects can be reduced by connecting or monolithically integrating a reverse-biased compensating photodiode or phototransistor into the gate of the optically-triggered thyristor. We have demonstrated the effectiveness of this hardening concept in silicon thyristors packaged with photodiodes and in gallium arsenide optically-triggered thyristors monolithically integrated with compensating phototransistors.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Franklin Carson, Richard Franklin Carson, Harry T. Weaver, Harry T. Weaver, Robert C. Hughes, Robert C. Hughes, Thomas E. Zipperian, Thomas E. Zipperian, Thomas M. Brennan, Thomas M. Brennan, B. Eugene Hammons, B. Eugene Hammons, } "Optically triggered GaAs thyristor switches: integrated structures for environmental hardening", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25043; https://doi.org/10.1117/12.25043
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