1 March 1991 Photoconductive switching for high-power microwave generation
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Proceedings Volume 1378, Optically Activated Switching; (1991); doi: 10.1117/12.25036
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
Abstract
Photoconductive switching is a technology that is being increasingly applied to generation of high power microwaves. Two primary semiconductors used for these devices are silicon and gallium arsenide. Diamond is a promising future candidate material. This paper discusses the important material parameters and switching modes critical issues for microwave generation and future directions for this high power photoconductive switching technology.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael D. Pocha, Wayne W. Hofer, "Photoconductive switching for high-power microwave generation", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25036; https://doi.org/10.1117/12.25036
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KEYWORDS
Switches

Switching

Gallium arsenide

Microwave radiation

Silicon

Diamond

Pulsed laser operation

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