Paper
1 April 1991 Compact PIN-amplifier module for gigabit rates optical interconnection
Tomihiro Suzuki, Yasuki Mikamura, Kazuo Murata, Takeshi Sekiguchi, Nobuo Shiga, Yasunori Murakami
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Abstract
The extremely compact PIN-amplifier module (6mm X 6mm X 8. 23mm) consisting of an InGaAs photodiode and a GaAs preamplifier IC has been developed. The ceramic sub-carrier having a GaAs IC on the top and a photodiode on the side was hermetically sealed into a kovar package which is provided a glass window. The characteristics of this module the combination of a transimpedance amplifier IC (1. Ok2 load) and a photodiode with lOOpm6 photosensitive area demonstrated the bandwidth of 770MHz and the sensitivity of - 29. 3dBm (at 622Mbps) and -27. 6dBm (at 1. 0625Gbps).
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomihiro Suzuki, Yasuki Mikamura, Kazuo Murata, Takeshi Sekiguchi, Nobuo Shiga, and Yasunori Murakami "Compact PIN-amplifier module for gigabit rates optical interconnection", Proc. SPIE 1389, Microelectronic Interconnects and Packages: Optical and Electrical Technologies, (1 April 1991); https://doi.org/10.1117/12.25545
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Cited by 3 scholarly publications.
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KEYWORDS
Gallium arsenide

Photodiodes

Field effect transistors

Indium gallium arsenide

Optical interconnects

Optical amplifiers

Packaging

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