1 April 1991 Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure
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Abstract
We have built and tested new multiple-layer silicon optical waveguide structures that have applications in wafer-scale optical interconnects. A repeated sequence of oxygen implantation annealing and Si epitaxy was used to make 5-layer or 6-layer structures containing a pair of 2- jim-thick Si waveguide cores separated by 1200A or 3700A of Si02. Coupled or uncoupled dual waveguiding at 1. 3 xm was observed. Inter-guide coupling for this stacked 3-D structure is analyzed here. Applications to all-silicon guided-wave optical interconnects are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Soref, Richard A. Soref, Fereydoon Namavar, Fereydoon Namavar, Elisabetta Cortesi, Elisabetta Cortesi, Lionel R. Friedman, Lionel R. Friedman, Richard Lareau, Richard Lareau, } "Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure", Proc. SPIE 1389, Microelectronic Interconnects and Packages: Optical and Electrical Technologies, (1 April 1991); doi: 10.1117/12.25543; https://doi.org/10.1117/12.25543
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