1 April 1991 Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure
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We have built and tested new multiple-layer silicon optical waveguide structures that have applications in wafer-scale optical interconnects. A repeated sequence of oxygen implantation annealing and Si epitaxy was used to make 5-layer or 6-layer structures containing a pair of 2- jim-thick Si waveguide cores separated by 1200A or 3700A of Si02. Coupled or uncoupled dual waveguiding at 1. 3 xm was observed. Inter-guide coupling for this stacked 3-D structure is analyzed here. Applications to all-silicon guided-wave optical interconnects are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Soref, Fereydoon Namavar, Elisabetta Cortesi, Lionel R. Friedman, Richard Lareau, "Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure", Proc. SPIE 1389, Microelectronic Interconnects and Packages: Optical and Electrical Technologies, (1 April 1991); doi: 10.1117/12.25543; https://doi.org/10.1117/12.25543

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