1 April 1991 High-density chip-to-chip interconnect system for GaAs semiconductor devices
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Proceedings Volume 1390, Microelectronic Interconnects and Packages: System and Process Integration; (1991); doi: 10.1117/12.25612
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
Abstract
A unique method has been developed for interconnecting a GaAs semiconductor device to an Application Specific Integrated Circuit (ASIC) chip. The device has 400 control points on a 25 im pitch. A silicon interconnect chip with cantilevered gold beam leads having the same packing density as the GaAs device and ASIC chip was designed to " bridge" the space between the two. Special photolithographic steps had to be developed to fabricate beams 250 pm long X 9 tm thick. The methods for fabricating the bridge chip and its final assembly will be discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stewart C. Wigginton, Scott E. Davidson, William L. Harting, "High-density chip-to-chip interconnect system for GaAs semiconductor devices", Proc. SPIE 1390, Microelectronic Interconnects and Packages: System and Process Integration, (1 April 1991); doi: 10.1117/12.25612; https://doi.org/10.1117/12.25612
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KEYWORDS
Gallium arsenide

Semiconductors

Bridges

Application specific integrated circuits

Control systems

Gold

Lead

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