1 August 1991 Properties of liquid-nitrogen-cooled electronic elements
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Proceedings Volume 1391, Laser Technology III; (1991) https://doi.org/10.1117/12.57172
Event: Laser Technology III, 1990, Szczecin, Poland
We present the results of theoretical analysis and of measurements of properties of both passive and active electronic components to be incorporated in a lownoise amplifier for use with a HgCdTe photodiode in a detector of weak 1O. 6im laser pulses. The effect of the working temperature of resistors and of capacitors on changes of their resistance and capacitance and on the noise level has been investigated and it is found that the most suitable types of these devices for cooled operation are metallized resistors and mica and styroflex capacitors. In selected applications monolithic ferroelectric capacitors may also be used. The noise and the amplifying properties of a broad range of bipolar MOSFET and JFET transistors were also measured and are compared graphically. On the basis of these results the JFET transistors are most suitable for low temperature use.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugeniusz Trojnar, Eugeniusz Trojnar, Stanislaw Trojanowski, Stanislaw Trojanowski, Roman Czechowicz, Roman Czechowicz, Mariusz Derwiszynski, Mariusz Derwiszynski, Krzysztof Kocyba, Krzysztof Kocyba, } "Properties of liquid-nitrogen-cooled electronic elements", Proc. SPIE 1391, Laser Technology III, (1 August 1991); doi: 10.1117/12.57172; https://doi.org/10.1117/12.57172

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