1 March 1991 Application of adaptive network theory to dry-etch monitoring and control
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Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991); doi: 10.1117/12.48929
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
Initial results on the application of adaptive network concepts to the problem of dry etching control are given in this paper. The role of off-line experimentation and analysis in defining a suitable parametric model for a dry etching process is first described. Alternative methods of parameter estimation are compared. An embryonic on-line regulator is then outlined. This has been used to control a parameter of interest namely the bias at the wafered electrode DCBW of a reactive ion etching (RIE) station. Successful tracking of a randomized trajectory for DCBW is demonstrated.
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V. G. I. Deshmukh, D. A. O. Hope, Tim I. Cox, A. J. Hydes, "Application of adaptive network theory to dry-etch monitoring and control", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48929; https://doi.org/10.1117/12.48929
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KEYWORDS
Dry etching

Control systems

Etching

Data modeling

Plasma

Statistical modeling

Integrated circuits

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