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1 March 1991 Dry etching of high-aspect ratio contact holes
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Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48909
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
Patterning of highaspect ratio contact holes is required for 0. 5/ira technologies. High selectivity and anisotropic wall profiles are necessary for a successful process since large percentage overetches are required for planarized dielectric layers. This paper will discuss work in patterning high aspect ratio contact hole patterns using a Drytek 384T TRIODE etching system. The etching of O. 6/nn by l/nn and O. 6jnn by 2/sm contact hole structures has been investigated. Discussion of process variables which control anisotropic wall profiles will be presented.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark Wiepking, M. LeVan, and Phyllis Mayo "Dry etching of high-aspect ratio contact holes", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48909
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