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1 March 1991 Evaluation of low-pressure silicon dry-etch processes with regard to low-substrate degradation
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Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48900
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
rrhe degradation of single crystal silicon by low pressure silicon dry etch processes was investigated with thermal wave measurements performed on unstructured silicon substrates. The wafers were processed in a magnetically confined tn-electrode reactor which allows independent control of the generation and of the extraction of the reactive species towards the wafer. rrhe increase of the thermal wave signal intensity by plasma processing was found to be mainly due to the kinetic energy of the reactive species and related to structural damage induced by implanted reactive species. The impact of the two RF power levels used on the damage level is represented by iso-damage lines in the plane of both RF power levels. In the low damage regime ofprocess parameters within this plot trenches have been etched into single crystal silicon for the realization ofcell structures for 16 and 64Mbit DRAMs and for an advanced isolation technique.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manfred Engelhardt "Evaluation of low-pressure silicon dry-etch processes with regard to low-substrate degradation", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48900
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