1 March 1991 Improvement in dry etching of tungsten features
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Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48922
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
The etching of tungsten can be achieved using chlorine or fluorine chemistries. In both cases the selectivity between tungsten and photoresist mask is very low and leads to a slopped etching with a poor C. D. control. So we developped a new process using an intermediate inorganic mask with a chlorine chemistry. The optimisation was carried out using an ECHIP experimental design. In the best conditions a CD control better than O. 1 was achieved with a smoothed tungsten layer 1 thick.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michel Heitzmann, Michel Heitzmann, Philippe Laporte, Philippe Laporte, Evelyne Tabouret, Evelyne Tabouret, } "Improvement in dry etching of tungsten features", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48922; https://doi.org/10.1117/12.48922
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