1 March 1991 LH electron cyclotron resonance plasma source
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Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48919
Event: Processing Integration, 1990, Santa Clara, CA, United States
The further development in semiconductor technology toward smaller dimensions and higher densities calls for low-energy high-power plasma sources in etching and deposition as well. An ECR plasma source developed by Leybold (LH) with an effective diameter of 9" is described. The radially symmetric construction of the source as well as the chosen microwave input allows wafers with diameter up to 200 mm to be processed with high uniformity. Special empasise has been given to minimum particle and damage generation. Several etch processes are presented to demonstrate the application potential of the source.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K.-H. Kretschmer, K.-H. Kretschmer, Gerhard Lorenz, Gerhard Lorenz, G. Castrischer, G. Castrischer, I. Kessler, I. Kessler, P. Baumann, P. Baumann, } "LH electron cyclotron resonance plasma source", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48919; https://doi.org/10.1117/12.48919

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