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1 March 1991 Laser processing of germanium
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Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48954
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
Thermal treatments a key process for IC technologies face large difficulties in case of germanium due to the poor chemical stability of germanium oxides i. e. GeO and Ge02. Laser processing allows for a drastically reduction of the interaction time highly suitable for Ge processing. We report two applications: i) the laser synthesis of thin and stable germanium oxynitrides films and ii) the laser doping of germanium with boron to the view of obtaining very shallow junctions.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valentin Craciun, Ion N. Mihailescu, Armando Luches, S. G. Kiyak, and G. N. Mikhailova "Laser processing of germanium", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48954
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