Paper
1 March 1991 Plasma diagnostics as inputs to the modeling of the oxygen reactive ion etching of multilevel resist structures
D. A. O. Hope, A. J. Hydes, Tim I. Cox, V. G. I. Deshmukh
Author Affiliations +
Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48913
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
This paper describes the use of physical diagnostics of plasma and etch reactor to provide a predictive capability for a particular dry etching process namely the reactive ion etching of organic polymers in an oxygen plasma. In particular the shape (isotropy) of etched features has been studied as a function of the potential DCB between the wafer and the plasma. The flux of oxygen atoms to the wafer has been estimated by measuring the rate of oxidation of a pure silver film deposited onto a quartz crystal microbalance. A discoid electrostatic probe has been used to determine the flux of energetic oxygen molecular ions. The energy (E) and angular (cr) distribution of energetic species N(a at the wafer surface has been obtained from a Monte Carlo simulation of the transport of ions across the plasma sheath. The measured magnitudes of the fluxes of oxygen atoms and energetic particles together with N(a have been incorporated into a simple model to simulate the etching process. Predicted etch rates and profiles are compared with experimental results of etching multilevel resist structures under corresponding conditions.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. A. O. Hope, A. J. Hydes, Tim I. Cox, and V. G. I. Deshmukh "Plasma diagnostics as inputs to the modeling of the oxygen reactive ion etching of multilevel resist structures", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48913
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KEYWORDS
Etching

Oxygen

Ions

Scattering

Reactive ion etching

Particles

Semiconducting wafers

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