1 March 1991 Plasma modeling in microelectronic processing
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Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48903
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
A continuum model for radiofrequency discharges valid at low pressures is presented. The analysis involves solution of the moments of the Boltzmann transport equations. A case study of 13. 56 MHz argon discharge at 300 mTorr is presented as an example. The analysis indicates that the major source of ionization is the bulk region of the discharge in contrast for discharges above 0. 5 Torr previous continuum models showed that the ionization rate peaks near the sheath/glow interface.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Meyya Meyyappan, Meyya Meyyappan, T. R. Govindan, T. R. Govindan, John P. Kreskovsky, John P. Kreskovsky, "Plasma modeling in microelectronic processing", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48903; https://doi.org/10.1117/12.48903
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