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Twostep rapid thermal diffusion (RTD) of phosphorus using a solid diffusion source has been described. Phosphorus profiles in silicon measured by SIMS show two distinct regions which are i) constant concentration region near the surface where the phosphorus concentration exceeds the solid solubility and ii) exponentally decaying region forming the diffusion tail. For the quantative analysis of the RTD process two correction terms for the diffusion time have been introduced. The first correction term incorporates the temperature transient cycle and the second term is due to the point defect life time during the cooling. From the BoltzmannMatano analysis we have found that the correction term due to the supersaturated point defects during the cooling is 3 sec. Also concentration dependent diffusivity of phosphorus in RTD has been extracted. The diffusivity at low concentrations is similar to the conventional furnace diffusion but the diffusivity at high concentrations is much higher than the furnace diffusion case. The solid solubility and precipitation of PSi binary system have been discussed. It has been found that the chemical concentration exceeds solid solubility near the surface in the predeposition process due to the codiffusion of phosphorus and oxygen. The high diffusivity in the high concentration region in the RTD has been explained as the precipitation enhanced diffusion. 1.
Byung-Jin Cho andChoong-Ki Kim
"Anomalous diffusion phenomena in two-step rapid thermal diffusion of phosphorus", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25703
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Byung-Jin Cho, Choong-Ki Kim, "Anomalous diffusion phenomena in two-step rapid thermal diffusion of phosphorus," Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25703