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1 April 1991 Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition
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Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25710
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
Oxygen levels in epitaxial Sii_Ge films grown by rapid thermal chemical vapor deposition (RTCVD) have been reduced to under 2 x 1018 cm3 and the source of oxygen in films with higher oxygen concentration has been identified. Films with low oxygen levels have minority carrier lifetimes in the us range and Si/Sii_Ge/Si heterojunction bipolar transistors (BET''s) fabricated with low oxygen levels have near-ideal base currents which do not depend on the base composition.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James C. Sturm, P. V. Schwartz, Erwin J. Prinz, and Charles W. Magee "Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25710
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