1 April 1991 Investigation of rapid thermal process-induced defects in ion-implanted Czochralski silicon
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Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25704
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
Rapid Thermal Processing (RTP) has shown promise as a tool that will reduce the thermal budget presently used in the manufacture of advanced ULSI devices. Because of the rapid rates of temperature rise and fall coupled with inherent system temperature non-uniformities of RiP systems plastic deformation has been identified to occur in RTP- processed wafers. Concern over these types of process-induced defects has brought about the identification of various methods of uniformity characterization of RiP-processed wafers. In this study 150 mm p-type wafers (with no screen oxide) were first implanted on a batch implanter with conditions of 5E15 of arsenic at 80 keY. After implantation the wafers were rapid thermally annealed for 10 seconds at the temperatures ranging from 900 to 1250 C. Each wafer was then measured by several techniques: wafer warpage measurements optical imaging inspection (magic mirror method) X-ray transmission topography and thermal wave modulated-optical reflectance. This presentation summarizes the measured results of wafer defects and damage due to the RTP processing. 1.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles B. Yarling, Charles B. Yarling, Sookap Hahn, Sookap Hahn, David T. Hodul, David T. Hodul, Hisaaki Suga, Hisaaki Suga, Walter Lee Smith, Walter Lee Smith, } "Investigation of rapid thermal process-induced defects in ion-implanted Czochralski silicon", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25704; https://doi.org/10.1117/12.25704
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