Noninvasive sensors for in-situ process monitoring and control in advanced microelectronics manufacturing

Mehrdad M. Moslehi

doi:10.1117/12.25712

1 April 1991 Noninvasive sensors for in-situ process monitoring and control in advanced microelectronics manufacturing

Mehrdad M. Moslehi

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25712
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

The combination of noninvasive in-situ monitoring sensors single-wafer processing modules vacuum-integrated cluster tools and computer-integrated manufacturing (CIM) can provide a suitable fabrication environment for flexible and high-yield advanced semiconductor device manufacturing. The use of in-situ sensors for monitoring of equipment process and wafer parameters results in increased equipment/process up-time reduced process and device parameter spread improved cluster tool reliability and functionality and reduced overall device manufacturing cycle time. This paper will present an overview of the main features and impact of noninvasive in-situ monitoring sensors for semiconductor device manufacturing applications. Specific examples will be presented for the use of critical sensors in conjunction with cluster tools for advanced CMOS device processing. A noninvasive temperature sensor will be presented which can monitor true wafer temperature via infrared (5. 35 jtm) pyrometery and laser-assisted real-time spectral wafer emissivity measurements. This sensor design eliminates any. temperature measurement errors caused by the heating lamp radiation and wafer emissivity variations. 1. SENSORS: MOTIVATIONS AND IMPACT Semiconductor chip manufacturing factories usually employ well-established statistical process control (SPC) techniques to minimize the process parameter deviations and to increase the device fabrication yield. The conventional fabrication environments rely on controlling a limited set of critical equipment and process parameters (e. g. process pressure gas flow rates substrate temperature RF power etc. ) however most of the significant wafer process and equipment parameters of interest are not monitored in real

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Mehrdad M. Moslehi "Noninvasive sensors for in-situ process monitoring and control in advanced microelectronics manufacturing", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25712

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