1 April 1991 RTP-induced defects in silicon studied by positron annihilation technique
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Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991); doi: 10.1117/12.25706
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
Rapid Thermal Processing (RTP) technique finds its success in microelectronics due to shorter time and energy cosumption than conventional furnace processing. There is no further impurity redistribution which is of great interest for VLSIs researchers. This is mainly because of shorter time scale. Rapid heating and cooling in the process may give rise to defects. These RTP-induced defects have been first time probed by Positron Annihilation Technique(PAT). Positron annihilation methods have been proved as a powerful tool for studing defects in solids. The increasing interest in technique stems from its defects sensitive and non destructive nature. Positron lifetime measurements on samples silicon dioxide grown by furnace methods and RTA are presented and discussed. The data obtained from PAT gives information regarding nature of defects in material. 1 .
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. M. Kulkarni, Revati N. Kulkarni, Arvind D. Shaligram, "RTP-induced defects in silicon studied by positron annihilation technique", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25706; https://doi.org/10.1117/12.25706
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KEYWORDS
Silicon

Semiconducting wafers

Picosecond phenomena

Diffusion

Oxidation

Oxides

Spectroscopy

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