1 April 1991 Rapid thermal annealing of the through-Ta5Si3 film implantation on GaAs
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Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25702
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
Silicon ion iniplantation on GaAs through tantaluni silicide film is investigated. The rapid thermal annealing is used to activate the dopant and to provide the abrupt shallow junction. After annealing process the carrier mobility ideality factor and barrier height of Ta5Si3/GaAs Schottky diode were measured. The carrier profiles were determined by C-V and differential Hall methods. The Rutherford back scattering and photoreflectance were performed in order to study the interdiffusion and internal field near the surface. Our experiments show the through-film (tantalum silicide)-implantation is the promising process in SAG technology. 1.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fon-Shan Huang, Fon-Shan Huang, W. S. Chen, W. S. Chen, Tzu-min Hsu, Tzu-min Hsu, } "Rapid thermal annealing of the through-Ta5Si3 film implantation on GaAs", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25702; https://doi.org/10.1117/12.25702
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