1 April 1991 Selective deposition of polycrystalline SixGe1-x by rapid thermal processing
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Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25711
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
Low pressure chemical vapor deposition (LPCVD) of polycrystalline SixGei. . x alloys in a cold-wall lamp heated rapid thermal processor was studied. SiGei. . alloys were deposited using the reactive gases GeHz and SiH2C12 in a hydrogen carrier gas. The depositions were performed at a total pressure of 2. 5Ton and at temperatures between 500C and 800C using GeH : SiH2C12 ratios ranging from 0. 025 to 1. 00. An enhancement in the deposition rate due to the addition of GeH was observed in agreement with earlier reports. The activation energy for deposition in the surface reaction limited regime varied from 20-30 Kcal/mole with the gas flow ratios used in this study. Results showed that SiGei. . alloys could be deposited selectively on silicon with no nucleation on Si02. Selective depositions were obtained when the GeH:SiH2Cl2 gas flow ratio was greater than 0. 2 regardless of the deposition temperature corresponding to a Ge content of 20 or higher in the films as determined by Auger Electron Spectroscopy (AES). Enhancement of the selectivity was attributed to the formation of highly volatile GeO. It was also shown that selectively deposited alloys could be used as diffusion sources to form very shallow ( 1000 A) pLn junctions in silicon by ion-implantation and rapid thermal annealing. 1.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mehmet C. Ozturk, Y. Zhong, D. T. Grider, M. Sanganeria, Jim J. Wortman, Michael A. Littlejohn, "Selective deposition of polycrystalline SixGe1-x by rapid thermal processing", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25711; https://doi.org/10.1117/12.25711
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