1 April 1991 Uniformity characterization of rapid thermal processor thin films
Author Affiliations +
Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991); doi: 10.1117/12.25724
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
When introduced in 1982 rapid thermal anneal (RTA) equipment was primarily used for the rapid turn-around of wafers used in qualification of ion implanters. Early on-line process characterization of these implanted and subsequently annealed wafers was made by the four-point probes. With the introduction of the appropriate software evaluation of implanted wafers by sheet resistance contour mapping quickly became the standard. This technique was easily applicable to the conductive thin films and became but one of the many different techniques used for complete uniformity characterization of these films. This paper will review the presently available mapping techniques commonly used for uniformity characterization of rapid thermal processor thin films. These techniques include ellipsometry reflectometry four-point probe Fourier Transform Infrared Spectrometry (VFIR) modulated-optical reflectance and reflective-optical inspection. Sample wafer measurements (i. e. contour and uniformity maps) from several of these instruments on thin film processes such as silicon dioxide titanium nitride and epi-siicon will be presented. 1.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles B. Yarling, Dawn-Marie Cook, "Uniformity characterization of rapid thermal processor thin films", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25724; https://doi.org/10.1117/12.25724
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Semiconducting wafers

Thin films

Reflectivity

Resistance

Titanium

FT-IR spectroscopy

Inspection

RELATED CONTENT


Back to Top