MOCVD of TlBaCaCuO: structure-property relations and progress toward device applications

Norihito Hamaguchi; Robert C. Gardiner; Peter S. Kirlin

doi:10.1117/12.25755

1 March 1991 MOCVD of TlBaCaCuO: structure-property relations and progress toward device applications

Norihito Hamaguchi, Robert C. Gardiner, Peter S. Kirlin

Proceedings Volume 1394, Progress In High-Temperature Superconducting Transistors and Other Devices; (1991) https://doi.org/10.1117/12.25755
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Highly c-axis-oriented Tl2Ba2CaCu2O(x) thin films were grown on MgO(100) by MOCVD and post annealing processes. Resistive transitions of 105 K, critical current densities as high as 100,000 Amps/sq cm (4 K) and surface resistivities 1/2 to 1/5 that of a gold standard at 17 GHz (77 K) were obtained with unpatterned films. Thin TlBaCaCuO films functioned as bolometric detectors over a spectral range of 1.5 to 20 micron; no quantum or nonequilibrium effects were observed between 4 and 125 K. Fine features were delineated in the BaCaCuO thin films by wet chemical etching. After Tl incorporation, resistive transitions exceeding 103 K were observed in the patterned films.

Citation Download Citation

Norihito Hamaguchi, Robert C. Gardiner, and Peter S. Kirlin "MOCVD of TlBaCaCuO: structure-property relations and progress toward device applications", Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); https://doi.org/10.1117/12.25755

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