1 March 1991 Pulsed-laser deposition of YBa2Cu3O7-x thin films: processing, properties, and performance
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Proceedings Volume 1394, Progress In High-Temperature Superconducting Transistors and Other Devices; (1991); doi: 10.1117/12.25751
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
One and two inch diameter wafers of (100) LaAlO3 have been coated with thin films of YBa2Cu3O7_ by a pulsed laser deposition technique. Deposition parameters have been optimized to produce uniform, 90 K films which have surface resistance values between 0.4 and 0.8 mμ at 4 K and 22 GHz.
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Ross E. Muenchausen, Stephen R. Foltyn, Xin Di Wu, Robert C. Dye, Nicholas S. Nogar, A. H. Carim, F. Heidelbach, D. Wayne Cooke, Robert C. Taber, Rod K. Quinn, "Pulsed-laser deposition of YBa2Cu3O7-x thin films: processing, properties, and performance", Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); doi: 10.1117/12.25751; https://doi.org/10.1117/12.25751
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KEYWORDS
Temperature metrology

Thin films

Coating

Pulsed laser deposition

Resistance

Microwave radiation

Thin film deposition

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