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1 February 1991 New photovoltaic effect in semiconductor junctions n+/p
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Proceedings Volume 1397, 8th Intl Symp on Gas Flow and Chemical Lasers; (1991) https://doi.org/10.1117/12.25962
Event: Eighth International Symposium on Gas-Flow and Chemical Lasers, 1990, Madrid, Spain
Abstract
The application of multiphotonic multistep absorption model to the 10,6 ?m wave lenght laser induced photovoltaic potentials in silicon junctions is discussed. First observations in Germanium junctions are reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Dominguez Ferrari, F. Encinas Sanz, and Jose M. Guerra Perez "New photovoltaic effect in semiconductor junctions n+/p", Proc. SPIE 1397, 8th Intl Symp on Gas Flow and Chemical Lasers, (1 February 1991); https://doi.org/10.1117/12.25962
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