Ion implantation in Gallium Arsenide MESFET technology

Joel Pereira de Souza; Devindra K. Sadana

doi:10.1117/12.26299

1 November 1990 Ion implantation in Gallium Arsenide MESFET technology

Joel Pereira de Souza, Devindra K. Sadana

Proceedings Volume 1405, 5th Congress of the Brazilian Society of Microelectronics; (1990) https://doi.org/10.1117/12.26299
Event: 5th Congress of the Brazilian Society of Microelectronics, 1990, Sao Paulo, Brazil

Abstract

This review emphasizes controlled shallow doping of GaAs by ion implantation and its limitations to the state-of-art GaAs IC technology. It discusses the electrical activation behavior of implanted silicon in GaAs upon subsequent capless or silicon nitride capped rapid thermal annealing (RTA). It is demonstrated that atomic H diffuses into the implanted region of GaAs during PECVD of a Si3N4 cap and the H retards the electrical activation kinetics of the implanted Si. Applications of ion implantation to achieve buried-p layers as well as isolation between neighboring devices in GaAs are also briefly discussed.

Citation Download Citation

Joel Pereira de Souza and Devindra K. Sadana "Ion implantation in Gallium Arsenide MESFET technology", Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); https://doi.org/10.1117/12.26299

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