1 November 1990 Oxygen and nitrogen effects on the electronic properties of RF-sputtered a-SiGe alloys
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Proceedings Volume 1405, 5th Congress of the Brazilian Society of Microelectronics; (1990) https://doi.org/10.1117/12.26301
Event: 5th Congress of the Brazilian Society of Microelectronics, 1990, Sao Paulo, Brazil
Abstract
a-SixGe1-x (x equals 0.70) thin films were deposited by RF- sputtering at a constant substrate temperature of 200 degree(s)C. By adding oxygen or ammonia to the sputtering atmosphere, amorphous films containing oxygen or nitrogen could be obtained. The incorporation of these elements was ascertained by IR spectroscopy which revealed the characteristic features of oxygen and nitrogen bonded to silicon. The IR spectra also showed that hydrogen incorporation has been achieved for the films prepared with ammonia. The increase of oxygen and nitrogen content shifts the peak position of the corresponding main absorption bands towards higher energies. The absorption edge and the optical gap are strongly dependent on oxygen and nitrogen incorporation. The increase of oxygen and nitrogen content increases the optical gap. The room temperature DC conductivity decreases by several orders of magnitude with oxygen and nitrogen incorporation and reflects the widening of the optical gap.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jorge M. T. Pereira, Jorge M. T. Pereira, } "Oxygen and nitrogen effects on the electronic properties of RF-sputtered a-SiGe alloys", Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26301; https://doi.org/10.1117/12.26301
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