1 November 1990 PC-based automated extraction of electrical parameters for VLSI MOSFETs: methods, algorithms, and implementation
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Proceedings Volume 1405, 5th Congress of the Brazilian Society of Microelectronics; (1990) https://doi.org/10.1117/12.26308
Event: 5th Congress of the Brazilian Society of Microelectronics, 1990, Sao Paulo, Brazil
Abstract
Experimental and algorithmic methods used for extracting electrical model parameters for small geometry MOS transistors are discussed. Results for such methods in micron-sized transistors are shown and SEPE - a PC-based algorithmic extractor using Levenberg-Marquardt algorithm for nonlinear fitting of DC parameters - is described. Its architecture and functions are presented followed by some specific results.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergio Bampi, "PC-based automated extraction of electrical parameters for VLSI MOSFETs: methods, algorithms, and implementation", Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26308; https://doi.org/10.1117/12.26308
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