1 November 1990 Versatile ion implanter for submicron and 3-D device engineering
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Proceedings Volume 1405, 5th Congress of the Brazilian Society of Microelectronics; (1990) https://doi.org/10.1117/12.26300
Event: 5th Congress of the Brazilian Society of Microelectronics, 1990, Sao Paulo, Brazil
Device scaling trends have resulted in smaller devices having new performance and reliability problems. Hot electron effects and difficulties in obtaining precise device structures and performance are among the most severe. Sophisticated and novel device structures incorporating advanced knowledge of device physics combined with better process uniformity and precision are required to overcome these problems. Fabrication of such structures demands new process technology to form the desired structures. An ion implanter has been designed specifically for submicron applications and for construction of advanced three-dimensional (3D) device structures. The instrument used a programmable goniometer as the target positioning system. This versatile endstation is designed to meet the emerging requirements for flexible target positioning and repositioning in submicron applications and other 3D devices. Some contributions of these new implanter features to device performance will be discussed. Specific examples of source-drain engineering applications (LATID - Large Angle Tilt Implanted Drain and LATIPS - Large Angle Tilt Implanted Punch-through Stopper devices), 3D structure applications (trenches), and channeling control applications are identified and discussed. The implanter is described together with some of its performance specifications.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerald P. Dykstra, Jerald P. Dykstra, Andy M. Ray, Andy M. Ray, Robert Simonton, Robert Simonton, } "Versatile ion implanter for submicron and 3-D device engineering", Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26300; https://doi.org/10.1117/12.26300

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