1 June 1991 Generalized Raman gain in nonparabolic semiconductors under strong magnetic field
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Proceedings Volume 1409, Nonlinear Optics II; (1991) https://doi.org/10.1117/12.43575
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
This paper investigates the quantum oscillations of the Raman gain in non-parabolic semiconductors under strong magnetic quantization, taking A3II B2V compounds as examples of nonlinear optical materials. The magneto-dispersion law was formulated in the said material within the framework of k. p formalism taking all types of anisotropies of the energy spectrum. The expression for the Raman gain for the said compound was derived, taking Cd3P2 as an example by including spin and broadening effects. It is found that the Raman gain increases with increasing electron concentration and oscillates with magnetic fields. The numerical values of the gain are greatest for the proposed dispersion relation of A3II B2V type of nonlinear optical materials as compared to wide gap model and the theoretical analysis is in agreement with the experimental observations as reported elsewhere. In addition, the corresponding results for three-band Kane model, two-band Kane model, and parabolic energy bands also have been formulated.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kamakhya Prasad Ghatak, Ardhendhu Ghoshal, Badal De, "Generalized Raman gain in nonparabolic semiconductors under strong magnetic field", Proc. SPIE 1409, Nonlinear Optics II, (1 June 1991); doi: 10.1117/12.43575; https://doi.org/10.1117/12.43575
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