1 June 1991 Optical processing using photorefractive GaAs and InP
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Proceedings Volume 1409, Nonlinear Optics II; (1991) https://doi.org/10.1117/12.43570
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Duncan Tsuen-Hsi Liu, Duncan Tsuen-Hsi Liu, Li-Jen Cheng, Li-Jen Cheng, Keung L. Luke, Keung L. Luke, } "Optical processing using photorefractive GaAs and InP", Proc. SPIE 1409, Nonlinear Optics II, (1 June 1991); doi: 10.1117/12.43570; https://doi.org/10.1117/12.43570
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