1 July 1991 UV-VIS solid state excimer laser: XeF in crystalline argon
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Proceedings Volume 1410, Solid State Lasers II; (1991) https://doi.org/10.1117/12.43601
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Spatial distributions of photochemically prepared XeF molecules in Ar crystals of 1 cm3 volume are reported for several illumination and annealing conditions and absolute XeF concentrations are derived. Small signal gain coefficients for the C-A (536 nm) transition in addition to the D-X (286 nm), B-X (411 nm) transitions are determined from the XeF concentrations and from measurements of the amplified spontaneous emission intensity versus amplification length and from line narrowing. High gain values of the order of 10 cm-1 are obtained for rather low pump energies. The threshold for laser oscillation and absolute efficiencies are determined.
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Gerald Zerza, Gerald Zerza, F. Knopp, F. Knopp, R. Kometer, R. Kometer, Gerard Sliwinski, Gerard Sliwinski, Nikolaus Schwentner, Nikolaus Schwentner, } "UV-VIS solid state excimer laser: XeF in crystalline argon", Proc. SPIE 1410, Solid State Lasers II, (1 July 1991); doi: 10.1117/12.43601; https://doi.org/10.1117/12.43601

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