1 July 1991 Applications of dry etching to InP-based laser fabrication
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43804
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
This paper reviews applications of dry etching to the fabrication of InP-based laser diodes. The plasma and ion beam processing techniques and chemistries used to etch InP, InGaAs and InGaAsP are briefly described. The application of these techniques to the fabrication of gratings (for distributed feedback lasers), active stripe mesas and channels, facets, and angled mirrors is then reviewed. The authors concentrate on dry etched/wet etched device performance and reliability comparisons for buried heterostructure devices, and process improvements afforded by dry etching.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Todd R. Hayes, Todd R. Hayes, Sung-June Kim, Sung-June Kim, Christian A. Green, Christian A. Green, } "Applications of dry etching to InP-based laser fabrication", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43804; https://doi.org/10.1117/12.43804

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