1 July 1991 Characterization of GRIN-SCH-SQW amplifiers
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43814
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
The performance of AlGaAs/GaAs GRIN-SCH-SQW ridge waveguide amplifiers has been characterized as a function of the rib-width, the amplifier bias and the master oscillator injection power. The results of this study revealed that the mode width is weakly dependent on the rib-width, the bias voltage increases with the injection signal level, and the 3 dB gain bandwidth is approximately 45 nm.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John M. Haake, John M. Haake, Mark S. Zediker, Mark S. Zediker, Chet L. Balestra, Chet L. Balestra, Danny J. Krebs, Danny J. Krebs, Joseph L. Levy, Joseph L. Levy, "Characterization of GRIN-SCH-SQW amplifiers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43814; https://doi.org/10.1117/12.43814

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