Experimental determination of recombination mechanisms in strained and unstrained quantum-well lasers

William C. Rideout

doi:10.1117/12.43797

1 July 1991 Experimental determination of recombination mechanisms in strained and unstrained quantum-well lasers

William C. Rideout

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43797
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

Carrier recombination rates are measured in both strained and unstrained quantum well lasers, and as far as possible the various physical mechanisms behind these recombination rates are separated out. The effect of Auger recombination on the higher than expected temperature sensitivity of threshold of 1.5 micrometers quantum well lasers is also examined.

Citation Download Citation

William C. Rideout "Experimental determination of recombination mechanisms in strained and unstrained quantum-well lasers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43797

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