1 July 1991 Fundamental array mode operation of semiconductor laser arrays using external spatial filtering
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43824
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
Detailed broad-area coupled-mode analysis of in-phase mode selection in carrier-guided arrays coupled to external cavities with spatial filters is presented and compared with experimental results. A high-power (68 mW with output facet reflectivity of 90% which corresponds to estimated 266 mW with output facet reflectivity of 30%), on-axis, single-lobe far field with nearly diffraction-limited (0.64 degree(s)) full width at half maximum is achieved from a ten- stripe carrier-guided anti-reflection-coated laser array by coupling to an external cavity with a spatial filter. The in-phase operation is verified by wavefront measurements using shearing interferometry.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chung-Pin Cherng, Marek Osinski, "Fundamental array mode operation of semiconductor laser arrays using external spatial filtering", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43824; https://doi.org/10.1117/12.43824
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