1 July 1991 High-frequency 1.3 um InGaAsP semi-insulating buried crescent lasers for analog applications
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991); doi: 10.1117/12.43819
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
The fabrication and performance of high-speed and low relative intensity noise (RIN) 1.3 micrometers InGaAsP semi-insulating buried crescent (SIBC) Fabry-Perot (FP) lasers with Zn- doped active layers are reported. These SIBC lasers have a 3-dB modulation bandwidth of 19 GHz for pulsed operation and 16 GHz for cw operation, and a RIN below -150 dB/Hz for biased current at 120 mA. This is the highest modulation bandwidth yet reported for InGaAsP lasers with semi-insulating current blocking layers.
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Wood-Hi Cheng, Ami Appelbaum, Rong-Ting Huang, Daniel S. Renner, Ken R. Cioffi, "High-frequency 1.3 um InGaAsP semi-insulating buried crescent lasers for analog applications", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43819; https://doi.org/10.1117/12.43819
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KEYWORDS
Modulation

Laser applications

Semiconductor lasers

Analog electronics

Continuous wave operation

Pulsed laser operation

Doping

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