1 July 1991 High-power diffraction-limited phase-locked GaAs/GaAlAs laser diode array
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43825
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
High power diffraction-limited GaAs/GaAlAs phase-locked laser diode arrays are developed and fabricated by LPE technique, standard photolithographic technique, wet etching and proton bombardment. The tailored gain-guided arrays are carried out by varying width of channel of laser, while the spacing between lasers remains constant. This array consists of six lasers. Its optical output power per facet is 300 mW at 2.7Ith, single mode cw operation, single lobe far-field pattern with FWHM 1.9 degree(s).
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yueqing Zhang, Yueqing Zhang, Xitian Zhang, Xitian Zhang, You Zhi Piao, You Zhi Piao, Dian-en Li, Dian-en Li, Sheng Li Wu, Sheng Li Wu, Shu-qin Du, Shu-qin Du, } "High-power diffraction-limited phase-locked GaAs/GaAlAs laser diode array", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43825; https://doi.org/10.1117/12.43825
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