1 July 1991 High-power visible semiconductor lasers
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43820
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
This paper reviews the recent progress of the 0.6 micrometers wavelength range high power InGaAlP visible light lasers. A fundamental transverse mode cw oscillation was achieved over 40 mW for the transverse mode stabilized structure fabricated by metalorganic chemical vapor deposition. Stable operations over 5000 hours were attained under the condition of 10 mW output power and 40 degree(s)C ambient temperature. High power operation over 80 mW was achieved for a window structure InGaAlP laser which was made in a very unique and simple fabrication process using a bandgap energy change phenomena by the atomic ordering change of this material.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masayuki Ishikawa, Kazuhiko Itaya, Masaki Okajima, Gen-ichi Hatakoshi, "High-power visible semiconductor lasers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43820; https://doi.org/10.1117/12.43820

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