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1 July 1991 InGaAs-GaAs strained layer lasers: physics and reliability
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991)
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Strained-layer (In)GaAs laser technology is being pursued at a number of laboratories with a view to extending the emission spectrum to longer wavelengths and exploiting strain-induced band-structure effects. Recently, remarkable longevity has been demonstrated for such devices and the implications for existing applications should insure continued research activity. Moreover, all of the key laser performance parameters -- efficiency, threshold current density and characteristic temperature -- have matched or exceeded their values for high-quality GaAs quantum wells. Evidence is mounting that the degradation phenomenology in pseudomorphic InGaAs lasers is radically different than in GaAs -- and for the better. Dark-line growth is inhibited, the derivative 'freak' failures cease to limit the lifetime and gradual degradation rates are tolerably low. This leads to the prospect of unity yield and 100% survival without benefit of costly burn-in procedures. Documented (extrapolated) lifetimes of 14,000 (50,000) hours are reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James J. Coleman, Robert G. Waters, and David P. Bour "InGaAs-GaAs strained layer lasers: physics and reliability", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991);

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