Low-threshold grating surface-emitting laser arrays

Gary A. Evans; Nils W. Carlson; David P. Bour; So Kuen Liew; Robert Amantea; Christine A. Wang; Hong K. Choi; James N. Walpole; Jerome K. Butler; W. E. Ferguson

doi:10.1117/12.43827

1 July 1991 Low-threshold grating surface-emitting laser arrays

Gary A. Evans, Nils W. Carlson, David P. Bour, So Kuen Liew, Robert Amantea, Christine A. Wang, Hong K. Choi, James N. Walpole, Jerome K. Butler, W. E. Ferguson

Author Affiliations +

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43827
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

Performance trends in the development of monolithic two-dimensional, coherent grating surface emitting (GSE) laser arrays are presented. Such GSE arrays now operate continuously to more than 3 W/surface and pulsed to more than 30 W/surface. They have obtained cw threshold current densities of under 140 A/cm2 with cw differential quantum efficiencies of 20 to 30% per surface. Linewidths in the 50 MHz range have been obtained with output powers of up to 270 mW per surface. The arrays typically consist of 10 to 30 mutually injection coupled gain sections with 10 laterally coupled ridge-guided lasers in each gain section. A single GaInAs strained-layer quantum well with a graded index separate confinement heterostructure geometry allows junction down mounting with light emission through the transparent GaAs substrate. A surface relief grating is used for feedback and outcoupling.

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Gary A. Evans, Nils W. Carlson, David P. Bour, So Kuen Liew, Robert Amantea, Christine A. Wang, Hong K. Choi, James N. Walpole, Jerome K. Butler, and W. E. Ferguson "Low-threshold grating surface-emitting laser arrays", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43827

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