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1 July 1991 Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43836
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
A GaAs single quantum well mushroom structure surface emitting laser with a threshold current as low as 1.6 mA and a large output power of 2.0 mW operating at continuous wave (CW) room temperature condition is reported. The sample was grown by molecular beam epitaxy (MBE) and mainly consisted of a 300 $ANS GaAs single quantum well as an active layer cladded by two AlAs/Al0.1Ga0.9As multilayers as the top and bottom mirrors. The devices were fabricated by chemical mesa etching and undercutting to form a mushroom structure. A low series resistance of 250 ohms was obtained on devices with a 10 X 10 micrometers 2 constricted active region using a selective zinc diffusion. The laser operated at 860 nm with a spectral linewidth of approximately 0.5 angstroms.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. J. Yang, Thaddeus G. Dziura, S. C. Wang, Mr. Rowell Fernandez, G. Du, and Shyh Wang "Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43836
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