1 July 1991 Mirror fabrication for full-wafer laser technology
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43808
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
The fabrication of etched mirrors for AlGaAs semiconductor lasers is described. The coating techniques for the passivation and reflectivity modification of the etched mirror surfaces are presented. Measurements on coated lasers show excellent beam quality, and satisfactory uniformity of laser characteristics across a wafer. Lasers which operate in a single transverse mode at output powers up to about 50 mW and have catastrophic optical damage (COD) thresholds greater than 120 mW have also been demonstrated.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Webb, David J. Webb, Melvin K. Benedict, Melvin K. Benedict, Gian-Luca Bona, Gian-Luca Bona, Peter L. Buchmann, Peter L. Buchmann, K. Daetwyler, K. Daetwyler, H. P. Dietrich, H. P. Dietrich, Michael Moser, Michael Moser, G. Sasso, G. Sasso, Peter Vettiger, Peter Vettiger, O. Voegeli, O. Voegeli, "Mirror fabrication for full-wafer laser technology", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43808; https://doi.org/10.1117/12.43808
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